14 PhDs at International Marie-Curie Programme

14 PhD positions are available for highly motivated Early Stage Researchers (ESRs) as part of the new H2020, EU-funded, Marie Skłodowska-Curie Joint Training and Research Programme “QUANTIMONY: Quantum Semiconductor Technologies exploiting Antimony”.

The QUANTIMONY consortium is a European Innovative Training Network (MSCA-ITN) with a core focus on the field of Sb based semiconductor science and technology, covering all scientific and engineering aspects from modelling through to material growth and characterization, device fabrication and analysis, and industrial exploitation.

We are looking for 14 young talented ESRs to work towards their PhD in one of these countries: Germany, Italy, the Netherlands, Spain and UK starting on April/June 2021.

We offer

• Comprehensive, interactive and international research training on semiconductor materials and devices covering fabrication, characterization, theoretical aspects and their application towards scalable and industrially relevant technologies.
• Secondments and travel opportunities, as well as research-specific, complementary and transferrable skills courses and workshops, delivered by academic and industry experts, which are tailor-made to prepare young researchers for their future careers.
• Three or four year contracts with a highly competitive salary adapted to the life cost in each host country.
• Family allowances (where applicable) as part of the employment package.

Application procedure

• Applications must be submitted online at https://quantimony.eu and include the following documents:
  – An internal application form listing your academic and job records (.docx template available).
  – A free format CV and official documentation such as degree and grades certificates will be required at a later stage.
• In order to submit an application, candidates must fulfil the eligibility criteria of the MSCA-ITN Programme; otherwise, each candidate can apply to one or several ESR positions (up to a maximum of four) of the list below according to his/her preferences and mobility rule restrictions.
• The deadline for application is 31 January 2021

Available PhD positions

Spain

• III-Sb quantum dots for spin-photon interfaces and quantum communications – CSIC, Spanish National Research Council (Madrid): Low temperature optical micro-spectroscopy, magnetic and electronic properties of semiconductors, energy band theory and simulation.
• Smart synchrotron nanoprobe investigations of III-Sb devices – CSIC, Spanish National Research Council (Madrid): Semiconductor physics and materials properties as well as synchrotron radiation microscopy.
• Novel III-Sb quantum materials for photovoltaics – Polytechnic University Madrid: Epitaxial growth of novel semiconductor nanostructures, optical and structural characterization of materials, device processing in clean room and optoelectronic characterization.

United Kingdom

• III-Sb charge-storage devices for non-volatile random access memories – Lancaster University: Semiconductor memory device and chip design and modelling, device and chip processing, electrical characterization.
• Telecoms-wavelength GaSb quantum ring single-photon LEDs – Lancaster University: Optical and device design and modelling, epitaxial semiconductor growth, optical and structural materials characterization, device processing, electroluminescence.
• Advanced electron microscopy investigations of III-Sb devices – The University of Warwick: High resolution scanning transmission electron microscopy, atomic resolution X-ray and electron energy-loss spectroscopy, scanning electron microscopy, simulation and image/data analysis.
• Wafer engineered long wave infrared photodiodes – IQE plc (Cardiff): Growth, optical and structural characterization of InAs/InAsSb photodiodes on different substrates.

Germany

• Development of antimony based interband cascade nanostructures and superlattices – Julius Maximilians University Würzburg: Epitaxial growth of Sb-based heterostructures, Optical spectroscopy in the mid-infrared wavelength region, electronic and opto-electronic properties of semiconductor materials.
• Evolutionary inverse design numerical approaches for improved III-Sb devices – Technical University Berlin: Electronic structure simulation techniques including continuum envelope function and density functional theory techniques, deep learning, and evolutionary strategies.
• Optimization of MOCVD technology and industrial aspects and upscaling of III-Sb MOCVD technology –AIXTRON SE, RWTH Aachen University: Design, carry out and analysing experiments to find the optimum MOCVD growth conditions for future MOCVD technology up-scale. Use of simulation for advanced reactor design.
• Multiband quantum transport in III-Sb based devices – nextnano GmbH (München): Modelling of quantum transport using the nonequilibrium Green’s function (NEGF) method in interband cascade devices, type-II superlattices and memory devices.

The Netherlands

• Atomic scale characterization of III-Sb quantum materials – Eindhoven University of Technology: Low temperature and room temperature scanning tunneling microscopy, scanning tunneling induced luminescence.
• Magnetic empirical tight binding methods for III-Sb devices –  Eindhoven University of Technology: Electronic structure simulation techniques including empirical tight-binding, continuum envelope function techniques, pseudopotential, and density functional theory techniques.

Italy

• Multiscale simulation of novel III-Sb quantum materials and devices – University of Rome Tor Vergata: Development, optimization and use of tight binding based electronic structure codes, multiscale-coupling with continuum model device simulation tools, device modelling and simulation.