Job number ACAD104178
Division/School School of Physics
Contract type Open Ended
Working pattern Full time
Salary £33,199 - £37,345 per annum
Closing date for applications 13-Oct-2019
Research Associate in Advanced Gallium Nitride and Other Wideband Gap Semiconductor Electronic Materials/Devices
Applications are invited for the role of Research Associate in the School of Physics, Centre for Device Thermography and Reliability (CDTR), to contribute to the characterization of advanced GaN devices which includes next generation RF switches and amplifiers. The researcher will study state of the art materials and devices from UK and international suppliers, use experimental electrical data, complemented by device modelling, to further the understanding of key technology.
The CDTR group is active in many EU, US, and UK research programmes, and is funded by the UK Engineering and Physical Sciences Research Council (EPSRC), the US Defense Advanced Research Projects Agency, the European Space Agency and other funding agencies as well as by industry.
Applicants should have postgraduate (PhD) experience in physics, materials science or engineering, with a good publication record. The position requires expertise or interest in the development of electrical measurement techniques and their application, as well as device simulation. A willingness to work together with /co-supervise PhD students of CDTR students will be necessary.
The position has funding for 2 years in the first instance.
Informal enquiries (not applications) to Professor M. Kuball, firstname.lastname@example.org, tel +44(0)117 928 8734
The University is committed to creating and sustaining a fully inclusive culture. We welcome applicants from all backgrounds and communities, especially from women and other groups currently under-represented in our department.
We welcome applications from all members of our community and are particularly encouraging those from diverse groups, such as members of the LGBT+ and BAME communities, to join us.